Patent · US Active

Semiconductor device with metal structure electrically connected to a conductive structure

US10090265B2 · kind B2 · utility

1Cited by

9References

38Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Schneegans · Vaterstetten, DE
Franziska Haering · Regensburg, DE
Hans-Joachim Schulze · Taufkirchen, DE
Bernhard Weidgans · Bernhardswald, DE

Key dates

Filing date	Jun 24, 2016
Grant date	Oct 2, 2018
Priority date	—
Expiry date	Jun 24, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3512
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor die that having a conductive structure. A metal structure is electrically connected to the conductive structure and contains a first metal. An auxiliary layer stack is sandwiched between the conductive structure and the metal structure and includes an adhesion layer that contains a second metal. The auxiliary layer stack further includes a metal diffusion barrier layer between the adhesion layer and the conductive structure. The adhesion layer contains the first metal and a second metal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.