Integrated circuit device and method for manufacturing same
US10090321B2 · kind B2 · utility
12Cited by
3References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 10, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Mar 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes an insulating film, a contact extending in a first direction and being provided inside the insulating film, and an insulating member. A composition of the insulating member is different from a composition of the insulating film. A level difference is formed in a side surface of the contact, a portion of a region of the side surface other than the level difference contacts the insulating film. The insulating member contacts the level difference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.