Semiconductor device including capacitor
US10090377B2 · kind B2 · utility
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11References
19Claims
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Key dates
| Filing date | Feb 6, 2017 |
| Grant date | Oct 2, 2018 |
| Priority date | — |
| Expiry date | Feb 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A semiconductor device comprises a capacitor that includes a first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode. The dielectric layer comprises a first high-k dielectric layer between the first electrode and the second electrode, a first silicon oxide layer between the first high-k dielectric layer and the second electrode, and a first aluminum oxide layer between the first high-k dielectric layer and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.