Sunmin MOON
12Patents
2h-index
19Co-inventors
43Inventor score
Filing activity: Feb 6, 2017 → Apr 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10453913B2 | Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device | Electricity | 3 | Active |
| US10892345B2 | Semiconductor device | Electricity | 2 | Active |
| US10658454B2 | Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device | Electricity | 2 | Active |
| US11081338B2 | Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device | Electricity | 1 | Active |
| US11621339B2 | Semiconductor device including capacitor | Electricity | 0 | Active |
| US12324145B2 | Semiconductor device with capping conductive layer on an electrode and method of fabricating the same | Electricity | 0 | Active |
| US12334308B2 | Batch-type apparatus for atomic layer etching (ALE), and ALE method and semiconductor device manufacturing method based on the same apparatus | Electricity | 0 | Active |
| US11114541B2 | Semiconductor device including capacitor | Electricity | 0 | Active |
| US10090377B2 | Semiconductor device including capacitor | Electricity | 0 | Active |
| US11764283B2 | Semiconductor device including capacitor | Electricity | 0 | Active |
| US11728160B2 | Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device | Electricity | 0 | Active |
| US11665884B2 | Semiconductor device with capping conductive layer on an electrode and method of fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.