Photoactive devices having low bandgap active layers configured for improved efficiency and related methods

US10090432B2 · kind B2 · utility

Assignee

• SOITEC · FR

Inventor

• Fred Newman · Albuquerque, US

Key dates

• Filing date: Feb 21, 2014
• Grant date: Oct 2, 2018
• Expiry date: Feb 21, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

Photoactive devices include an active region disposed between first and second electrodes and configured to absorb radiation and generate a voltage between the electrodes. The active region includes an active layer comprising a semiconductor material exhibiting a relatively low bandgap. The active layer has a front surface through which radiation enters the active layer and a relatively rougher back surface on an opposing side of the active layer. Methods of fabricating photoactive devices include the formation of such an active region and electrodes.