Polishing composition and polishing method
US10093834B2 · kind B2 · utility
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1References
17Claims
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Inventor
Key dates
| Filing date | Aug 28, 2015 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Aug 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
There are provided a polishing composition and a method for polishing capable of, when a substrate including polysilicon is polished, limiting the polishing rate of the polysilicon, and selectively polishing a silicon compound other than the polysilicon, such as silicon nitride. The polishing composition used includes abrasives, an organic acid and a conjugate base of the organic acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.