Method and system for preparing polycrystalline group III metal nitride
US10094017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2016 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Feb 20, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/80
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.