Patent · US Active

Critical dimension variation correction in extreme ultraviolet lithography

US10095101B2 · kind B2 · utility

2Cited by

0References

12Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Sergey Oshemkov · Le Blanc-Mesnil, FR
Vladimir Kruglyakov · Migdal HaEmek, IL
Frederik Blumrich · Jena, DE
Yuval Perets · Migdal HaEmek, IL

Key dates

Filing date	Jun 22, 2016
Grant date	Oct 9, 2018
Priority date	—
Expiry date	Jun 30, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70625
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method of correcting a critical dimension (CD) variation in extreme ultraviolet (EUV) photolithography includes mapping the CD variation of a wafer exposure field formed by a photolithography system that includes an EUV photolithography photomask. Parameters of a treatment to produce a change in reflectance at a working wavelength of EUV radiation in a region of a reflective multilayer of the photomask are determined, the change in reflectance being calculated to correct the mapped CD variation. A treatment beam is directed to the region. The region is treated with the beam in accordance with the determined parameters.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.