Method and apparatus for plasma etching
US10096453B2 · kind B2 · utility
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17References
7Claims
0Family size
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Key dates
| Filing date | Apr 20, 2016 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Apr 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma etching apparatus includes an etching chamber and at least one processor. The etching chamber is configured to support a target therein. The at least one processor is configured to: determine a process condition for plasma etching the target before execution of a plasma etching process; and control an aspect of the chamber according to the process condition. The process condition includes a unit etching time over which the plasma etching process is to be continuously performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.