Jun-Youl Yang
10Patents
4h-index
36Co-inventors
52Inventor score
Filing activity: Dec 3, 2010 → Jul 3, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8552489B2 | Vertical channel memory devices with nonuniform gate electrodes | Electricity | 12 | Active |
| US9530670B2 | Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidant | Electricity | 5 | Active |
| US8685821B2 | Vertical channel memory devices with nonuniform gate electrodes and methods of fabricating the same | Electricity | 5 | Active |
| US8765551B2 | Non-volatile memory device having vertical structure and method of manufacturing the same | Electricity | 4 | Active |
| US8963231B2 | Three dimensional semiconductor memory devices and methods of fabricating the same | Electricity | 2 | Active |
| US8168509B2 | Etching methods and methods of manufacturing a CMOS image sensor using the same | Electricity | 1 | Active |
| US10580617B2 | Method and apparatus for plasma etching | Electricity | 1 | Active |
| US9972638B2 | Methods of fabricating three-dimensional semiconductor devices | Electricity | 0 | Active |
| US10096453B2 | Method and apparatus for plasma etching | Electricity | 0 | Active |
| US10910237B2 | Operating method for wet etching system and related system | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.