Seamless trench fill using deposition/etch techniques
US10096514B2 · kind B2 · utility
3Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2017 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Jul 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76865
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for filing a feature on a substrate surface comprising depositing a conformal nitride film on the substrate surface and at least one feature on the surface, oxidizing a portion of the nitride film to form an asymmetric oxide film on top of the nitride film and etching the oxide film from the nitride film to leave a v-shaped nitride film in the at least one feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.