Transistor and image sensor having the same
US10096633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2016 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Jun 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The source follower transistor includes: a stack structure formed by sequentially stacking a first conductive layer, an insulating layer and a second conductive layer; an open portion formed through the second conductive layer and the insulating layer so as to expose the first conductive layer; a channel layer formed along the surface of the open portion so as to be connected to the first conductive layer and the second conductive layer; and a gate is connected to the light receiving section and which is formed over the channel layer so as to overlap the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.