Patent · US Active

Semiconductor structure and manufacturing method thereof

US10096635B2 · kind B2 · utility

0Cited by
1References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 5, 2015
Grant dateOct 9, 2018
Priority date
Expiry dateAug 5, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/11

Abstract

A semiconductor structure includes a chip, a light transmissive plate, a spacer, and a light-shielding layer. The chip has an image sensor, a first surface and a second surface opposite to the first surface. The image sensor is located on the first surface. The light transmissive plate is disposed on the first surface and covers the image sensor. The spacer is between the light transmissive plate and the first surface, and surrounds the image sensor. The light-shielding layer is located on the first surface between the spacer and the image sensor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.