Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
US10096680B2 · kind B2 · utility
1Cited by
2References
18Claims
0Family size
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Key dates
| Filing date | Mar 24, 2017 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Mar 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device, including a silicon carbide semiconductor structure, an insulated gate structure including a gate insulating film contacting the silicon carbide semiconductor structure and a gate electrode formed on the gate insulating film, an interlayer insulating film covering the insulated gate structure, a metal layer provided on the interlayer insulating film for absorbing or blocking hydrogen, and a main electrode provided on the metal layer and electrically connected to the silicon carbide semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.