Inventor · Tsukuba, JP

Shinsuke Harada

71Patents
5h-index
52Co-inventors
75Inventor score

Filing activity: Nov 14, 2001 → Apr 29, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7265388B2 Semiconductor device Electricity 21 Expired
US6759684B2 SiC semiconductor device Electricity 16 Expired
US10008592B1 Semiconductor device Electricity 8 Active
US8003991B2 Silicon carbide MOS field effect transistor with built-in Schottky diode and method for fabrication thereof Electricity 7 Active
US7538352B2 Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same Electricity 5 Expired
US6812102B2 Semiconductor device manufacturing method Electricity 4 Expired
US9653599B2 Semiconductor device and method of manufacturing semiconductor device Electricity 4 Active
US10522673B2 Semiconductor device having a schottky barrier diode Electricity 3 Active
US7811874B2 Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device Emerging Cross-Sectional Technologies 3 Active
US10243038B1 Semiconductor device Electricity 3 Active
US7880173B2 Semiconductor device and method of manufacturing same Electricity 3 Active
US9627486B2 Semiconductor device Electricity 3 Active
US7728336B2 Silicon carbide semiconductor device and method for producing the same Electricity 3 Active
US10199493B2 Semiconductor device and method of manufacturing semiconductor device Electricity 3 Active
US10418478B2 Semiconductor device Electricity 2 Active
US9184230B2 Silicon carbide vertical field effect transistor Electricity 2 Active
US10263105B2 High voltage semiconductor device Electricity 2 Active
US10374080B2 Semiconductor device and method of manufacturing semiconductor device Electricity 2 Active
US9978842B2 Semiconductor device and method for manufacturing the same Electricity 2 Active
US10186610B2 Semiconductor device and method of manufacturing the semiconductor device Electricity 2 Active
US10439060B2 Semiconductor device and method of manufacturing semiconductor device Electricity 2 Active
US10403749B2 Method of manufacturing semiconductor device Electricity 2 Active
US10600921B2 Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device Electricity 1 Active
US9537002B2 Semiconductor device with SiC base layer Electricity 1 Active
US9923062B2 Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.