Integrated circuit device and method of manufacturing the same
US10096688B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2016 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Jan 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
Abstract
An integrated circuit device includes a fin type active area protruding from a substrate and having an upper surface at a first level; a nanosheet extending in parallel to the upper surface of the fin type active area and comprising a channel area, the nanosheet being located at a second level spaced apart from the upper surface of the fin type active area; a gate disposed on the fin type active area and surrounding at least a part of the nanosheet, the gate extending in a direction crossing the fin type active area; a gate dielectric layer disposed between the nanosheet and the gate; a source and drain region formed on the fin type active area and connected to one end of the nanosheet; a first insulating spacer on the nanosheet, the first insulating spacer covering sidewalls of the gate; and a second insulating spacer disposed between the gate and the source and drain region in a space between the upper surface of the fin type active area and the nanosheet, the second insulating spacer having a multilayer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.