Tae Jong Lee
47Patents
11h-index
70Co-inventors
78Inventor score
Filing activity: Aug 18, 2000 → Aug 14, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6348385B1 | Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant | Electricity | 65 | Expired |
| US6387747B1 | Method to fabricate RF inductors with minimum area | Electricity | 35 | Expired |
| US7094669B2 | Structure and method of liner air gap formation | Electricity | 34 | Expired |
| US6558994B2 | Dual silicon-on-insulator device wafer die | Emerging Cross-Sectional Technologies | 31 | Expired |
| US6355563B1 | Versatile copper-wiring layout design with low-k dielectric integration | Electricity | 27 | Expired |
| US6319767A | Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors via plasma ashing and hard masking technique | Electricity | 21 | Expired |
| US6613652B2 | Method for fabricating SOI devices with option of incorporating air-gap feature for better insulation and performance | Electricity | 20 | Expired |
| US7224060B2 | Integrated circuit with protective moat | Electricity | 14 | Expired |
| US6284590A | Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors | Emerging Cross-Sectional Technologies | 13 | Expired |
| US7585768B2 | Combined copper plating method to improve gap fill | Electricity | 11 | Active |
| US6376360B1 | Effective retardation of fluorine radical attack on metal lines via use of silicon rich oxide spacers | Electricity | 11 | Expired |
| US9859393B2 | Integrated circuit device and method of fabricating the same | Electricity | 9 | Active |
| US10096688B2 | Integrated circuit device and method of manufacturing the same | Electricity | 9 | Active |
| US6468880B1 | Method for fabricating complementary silicon on insulator devices using wafer bonding | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6432797B1 | Simplified method to reduce or eliminate STI oxide divots | Electricity | 8 | Expired |
| US9490258B2 | Semiconductor device and method for fabricating the same | Electricity | 8 | Active |
| US10153277B2 | Integrated circuit device and method of fabricating the same | Electricity | 7 | Active |
| US7989338B2 | Grain boundary blocking for stress migration and electromigration improvement in CU interconnects | Electricity | 6 | Active |
| US6849928B2 | Dual silicon-on-insulator device wafer die | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7253097B2 | Integrated circuit system using dual damascene process | Electricity | 4 | Expired |
| US10541127B2 | Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices | Electricity | 3 | Active |
| US8047275B2 | Ground water restoration type terrestrial heat exchanger using auto temperature bypass apparatus | Emerging Cross-Sectional Technologies | 3 | Active |
| US10593801B2 | Semiconductor devices and methods of fabricating the same | Electricity | 3 | Active |
| US10074717B2 | Semiconductor devices and methods of manufacturing the same | Electricity | 3 | Active |
| US7276440B2 | Method of fabrication of a die oxide ring | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.