Semiconductor device and method of forming the same
US10096722B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Oct 4, 2016 |
| Grant date | Oct 9, 2018 |
| Priority date | — |
| Expiry date | Oct 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A semiconductor device having a fast recovery diode (FRD) is provided. The semiconductor device includes a substrate, a first well region disposed in the substrate, a base region disposed in the first well region, a first impurity region of a first conductivity type disposed in the base region, a second impurity region of a second conductivity type disposed in the first well region and separated from the base region, a first electrode electrically connected to the base region and the first impurity region, and a second electrode electrically connected to the second impurity region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.