Patent assignee · TW · COMPANY

MACRONIX INTERNATIONAL CO., LTD.

3,589Patents
2,536Active
3,589Granted
60Portfolio score

Filing activity: Sep 5, 1990 → May 6, 2024 · 897 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US8076230B2 Method of forming self-aligned contacts and local interconnects Electricity 527 Active
US6579760B1 Self-aligned, programmable phase change memory Electricity 320 Expired
US6320786A Method of controlling multi-state NROM Physics 314 Expired
US8203187B2 3D memory array arranged for FN tunneling program and erase Electricity 294 Active
US8208279B2 Integrated circuit self aligned 3D memory array and manufacturing method Electricity 289 Active
US7688619B2 Phase change memory cell and manufacturing method Physics 282 Active
US7608848B2 Bridge resistance random access memory device with a singular contact structure Electricity 272 Active
US7229502B2 Method of forming a silicon nitride layer Electricity 266 Expired
US7450423B2 Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure Electricity 264 Active
US7697316B2 Multi-level cell resistance random access memory with metal oxides Electricity 264 Active
US6487114B2 Method of reading two-bit memories of NROM cell Physics 263 Expired
US7786460B2 Phase change memory device and manufacturing method Physics 256 Active
US7586778B2 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states Physics 256 Active
US5526307A Flash EPROM integrated circuit architecture Electricity 246 Expired
US6864503B2 Spacer chalcogenide memory method and device Emerging Cross-Sectional Technologies 231 Expired
US7447068B2 Method for programming a multilevel memory Physics 231 Active
US6177317A Method of making nonvolatile memory devices having reduced resistance diffusion regions Electricity 228 Expired
US5956473A Method and system for managing a flash memory mass storage system Physics 222 Expired
US6271090A Method for manufacturing flash memory device with dual floating gates and two bits per cell Electricity 221 Expired
US6734107B2 Pitch reduction in semiconductor fabrication Electricity 218 Expired
US6638441B2 Method for pitch reduction Emerging Cross-Sectional Technologies 214 Expired
US7220983B2 Self-aligned small contact phase-change memory method and device Electricity 206 Expired
US9589982B1 Structure and method of operation for improved gate capacity for 3D NOR flash memory Physics 203 Active
US5754469A Page mode floating gate memory device storing multiple bits per cell Physics 198 Expired
US6955961B1 Method for defining a minimum pitch in an integrated circuit beyond photolithographic resolution Emerging Cross-Sectional Technologies 196 Expired

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.