Method for synthesis of high quality large area bulk gallium based crystals
US10100425B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Nov 2, 2015 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Oct 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.