Patent · US Active

Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof

US10100431B2 · kind B2 · utility

1Cited by

7References

9Claims

0Family size

Assignee

Zing Semiconductor Corporation · CN

Inventors

Deyuan Xiao · Shanghai, CN
Richard R. Chang · Shanghai, CN

Key dates

Filing date	Sep 16, 2016
Grant date	Oct 16, 2018
Priority date	—
Expiry date	Feb 17, 2037

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B33/00
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

This invention provides a method for growing monocrystalline silicon by applying Czochralski method comprising forming a melt of silicon-containing materials in a crucible and pulling the melt for monocrystalline silicon growth, which is characterized by, introducing a gas containing argon during formation of the melt, and, applying a magnetic field during the pulling step. This invention also provides a method for producing a wafer based on the above monocrystalline silicon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.