Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
US10103059B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 28, 2016 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Jul 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a silicon carbide semiconductor device includes forming on a front surface of a silicon carbide substrate of a first conductivity type, a silicon carbide layer of the first conductivity type of a lower concentration; selectively forming a region of a second conductivity type in a surface portion of the silicon carbide layer; selectively forming a source region of the first conductivity type in the region; forming a source electrode electrically connected to the source region; forming a gate insulating film on a surface of the region between the silicon carbide layer and the source region; forming a gate electrode on the gate insulating film; forming a drain electrode on a rear surface of the substrate; forming metal wiring comprising aluminum for the device, the metal wiring being connected to the source electrode; and performing low temperature nitrogen annealing after the metal wiring is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.