Pattern inspection methods and methods of fabricating reticles using the same via directing charged particle beams through discharge layers
US10103071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2017 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | May 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reticle may be fabricated and inspected. The reticle, which may include thin patterns, may be selectively incorporated into a fabricated semiconductor device based on measurement information generated based on the inspecting. The inspecting may include forming thin patterns on a substrate, forming a first discharge layer on the thin patterns, and directing a first charged particle beam to the substrate, such that the first charged particle beam passes through the first discharge layer. Measurement information may be generated based on the first charged particle beam. The first discharge layer may connect the thin patterns to each other and may be separated from the substrate between the thin patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.