Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication
US10103195B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2015 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Mar 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
Abstract
A pixel comprises three adjacent sub-pixels, formed by respective stacks of semi-conducting layers wherein: each sub-pixel comprises a first active layer, adapted for emitting a light at a first wavelength when an electric current passes through it; another sub-pixel comprises a second active layer, adapted for emitting a light at a second wavelength greater than the first wavelength; another sub-pixel comprises a third active layer, adapted for emitting a light at a third wavelength greater than the first wavelength and different from the second wavelength; at least one from among the second and third active layers being adapted for emitting light when it is excited by the light at the first wavelength emitted by the first active layer of the same sub-pixel. Semi-conducting structure and methods for the fabrication of such a pixel are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.