Benjamin Damilano
9Patents
4h-index
18Co-inventors
54Inventor score
Filing activity: Aug 8, 2000 → Jun 6, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6445009B1 | Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6730943B2 | Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device | Electricity | 14 | Expired |
| US10103195B2 | Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication | Electricity | 11 | Active |
| US8470618B2 | Method of manufacturing a light-emitting diode having electrically active and passive portions | Electricity | 6 | Active |
| US11217663B2 | Semiconductor heterostructures with wurtzite-type structure on ZnO substrate | Electricity | 0 | Active |
| US11085130B2 | Method for producing nanostructures | Chemistry; Metallurgy | 0 | Active |
| US12328975B2 | Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN | Electricity | 0 | Active |
| US11047799B2 | Device and method for providing illumination for total-internal-reflection fluorescence microscopy using opaque mask | Physics | 0 | Active |
| US12342661B2 | Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.