FinFET device and method for fabricating the same
US10103249B2 · kind B2 · utility
6Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2015 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Sep 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins and a source/drain structure. The semiconductor fins and the source/drain structure are located on the semiconductor substrate, and the source/drain structure is connected to the semiconductor fins. The source/drain structure has a top portion with a W-shape cross section for forming a contact landing region. The semiconductor device may further include a plurality of capping layers located on a plurality of recessed portions of the top portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.