Jung-Chi Tai
24Patents
4h-index
28Co-inventors
63Inventor score
Filing activity: Jan 25, 2001 → Jun 28, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9831116B2 | FETS and methods of forming FETs | Electricity | 17 | Active |
| US6273978A | Process for producing carded and air-laid non-woven composite fabric | Textiles; Paper | 6 | Expired |
| US10103249B2 | FinFET device and method for fabricating the same | Electricity | 6 | Active |
| US10172505B2 | Cleaning pad for a robot cleaner | Human Necessities | 5 | Active |
| US9905641B2 | Semiconductor device and manufacturing method thereof | Electricity | 4 | Active |
| US11004724B2 | FETS and methods of forming FETS | Electricity | 3 | Active |
| US9706800B2 | Face mask and method for making the same | Emerging Cross-Sectional Technologies | 3 | Active |
| US10468482B2 | Semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US8359817B2 | Face mask combination and automatic packaging method for face masks | Performing Operations; Transporting | 1 | Active |
| US9486990B2 | Method for manufacturing a shaped sheet laminate | Emerging Cross-Sectional Technologies | 1 | Active |
| US11728208B2 | FETS and methods of forming FETS | Electricity | 1 | Active |
| US12094761B2 | FETs and methods of forming FETs | Electricity | 0 | Active |
| US10183092B2 | Sanitary article and method for making the same | Human Necessities | 0 | Active |
| US10854715B2 | Supportive layer in source/drains of FinFET devices | Electricity | 0 | Active |
| US11430878B2 | Method for fabricating semiconductor device | Electricity | 0 | Active |
| US11948999B2 | Semiconductor device | Electricity | 0 | Active |
| US12057450B2 | Epitaxy regions with large landing areas for contact plugs | Electricity | 0 | Active |
| US11652105B2 | Epitaxy regions with large landing areas for contact plugs | Electricity | 0 | Active |
| US11476331B2 | Supportive layer in source/drains of FinFET devices | Electricity | 0 | Active |
| US10991795B2 | Semiconductor device and manufacturing method thereof | Electricity | 0 | Active |
| US10269618B2 | FETS and methods of forming FETS | Electricity | 0 | Active |
| US11855142B2 | Supportive layer in source/drains of FinFET devices | Electricity | 0 | Active |
| US11876175B2 | Secondary battery structure having windable flexible polymer matrix solid electrolyte and manufacturing method thereof | Emerging Cross-Sectional Technologies | 0 | Active |
| US10749013B2 | Semiconductor device and method for fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.