Silicon IMPATT diode
US10103278B2 · kind B2 · utility
0Cited by
12References
19Claims
0Family size
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Key dates
| Filing date | Jul 7, 2016 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Jul 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A method to integrate a vertical IMPATT diode in a planar process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.