Dimension regulation of power device to eliminate hot spot generation
US10103724B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 25, 2016 |
| Grant date | Oct 16, 2018 |
| Priority date | — |
| Expiry date | Apr 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/64
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A parameter is compared to a lower threshold. The parameter is a gate-to-source voltage that is associated with a first transistor or a drain current that is associated with the first transistor. The first transistor is a field effect transistor, and the first transistor is a power device. If one or more of at least one supplemental transistor is coupled to the first transistor, and the parameter is less than the lower threshold, a plurality of switches is controlled to decouple at least one of the at least one supplemental transistor from the first transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.