Compositions and methods using same for deposition of silicon-containing film

US10106890B2 · kind B2 · utility

Assignee

• Versum Materials US, LLC · US

Inventors

• Jianheng Li · Santa Clara, US
• John Francis Lehmann · Bethlehem, US
• Xinjian Lei · Vista, US
• Raymond Nicholas Vrtis · Allentown, US
• Robert Gordon Ridgeway · Tempe, US
• William Robert Entley · Tempe, US

Key dates

• Filing date: Oct 23, 2015
• Grant date: Oct 23, 2018
• Expiry date: Oct 23, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02348
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.