Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device using same
US10106914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2016 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | May 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.