Semiconductor device including threshold voltage measurement circuitry
US10107854B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 16, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Aug 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45368
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device may include a substrate, active circuitry on the substrate and including differential transistor pairs, and threshold voltage test circuitry on the substrate. The threshold voltage test circuitry may include a pair of differential test transistors replicating the differential transistor pairs within the active circuitry, with each test transistor having a respective input and output, and at least one gain stage configured to amplify a difference between the outputs of the differential test transistors for measuring a threshold voltage thereof. The differential transistor pairs and the pair of differential test transistors may each include spaced apart source and drain regions, a channel region extending between the source and drain regions, and a gate overlying the channel region. Each of the channel regions may include a superlattice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.