Patent · US Active

Method for fabricating handling wafer

US10109474B1 · kind B1 · utility

13Cited by
4References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 23, 2017
Grant dateOct 23, 2018
Priority date
Expiry dateMay 23, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2223/54426
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for fabricating handling wafer includes providing a substrate, having a front side and a back side. The front side of the substrate is disposed on a supporting pin. A first oxide layer is formed surrounding the substrate. A portion of the first oxide layer is removed to expose the front side of the substrate. An alignment mark is formed on the front side of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.