Silicon-containing condensate, composition for forming a silicon-containing resist under layer film, and patterning process
US10109485B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2016 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Dec 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a silicon-containing condensate comprising one or more repeating units selected from a repeating unit shown by the following general formula (A1), a repeating unit shown by the following general formula (A2), and a repeating unit shown by the following general formula (A3), wherein R1 represents a group shown by the following general formula (A-1) or (A-2); R2 and R3 each independently represent the same group as R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms other than R1. There can be provided a silicon-containing condensate to give a composition for forming a silicon-containing resist under layer film which can form a resist under layer film with good adhesiveness to any resist pattern, whether the pattern is formed by negative development or positive development.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.