TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof
US10109659B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Jul 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/77
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A includes a switch TFT and a drive TFT. The switch TFT is formed of a first source and a first drain, a first gate, and a first etching stopper layer, and a first oxide semiconductor layer and first gate isolation layer sandwiched therebetween. The drive TFT is formed of a second source and a second drain, a second gate, and a second oxide semiconductor layer, and a first etching stopper layer and a second gate isolation layer sandwiched therebetween. The electrical properties of the switch TFT and the drive TFT are different. The switch TFT has a smaller subthreshold swing to achieve fast charge and discharge, and the drive TFT has a relatively larger subthreshold swing for controlling a current and a grey scale more precisely.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.