Patent · US Active

Select device for memory cell applications

US10109677B2 · kind B2 · utility

1Cited by

11References

20Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

David H. Wells · Boise, US
Christopher D. Cardon · Boise, US
Caner Onal · Palo Alto, US

Key dates

Filing date	Aug 1, 2017
Grant date	Oct 23, 2018
Priority date	—
Expiry date	Aug 1, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/52
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.