Micron Technology, Inc.
🏢 View company profile →37,772Patents
21,281Active
37,772Granted
58Portfolio score
Filing activity: Mar 20, 1978 → Jul 15, 2024 · 4,483 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5278100A | Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers | Emerging Cross-Sectional Technologies | 1,096 | Expired |
| US5328810A | Method for reducing, by a factor or 2.sup.-N, the minimum masking pitch of a photolithographic process | Emerging Cross-Sectional Technologies | 1,035 | Expired |
| US7611980B2 | Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures | Emerging Cross-Sectional Technologies | 718 | Active |
| US6235554A | Method for fabricating stackable chip scale semiconductor package | Electricity | 674 | Expired |
| US7045430B2 | Atomic layer-deposited LaAlO3 films for gate dielectrics | Electricity | 670 | Expired |
| US5920788A | Chalcogenide memory cell with a plurality of chalcogenide electrodes | Emerging Cross-Sectional Technologies | 669 | Expired |
| US7135421B2 | Atomic layer-deposited hafnium aluminum oxide | Electricity | 632 | Expired |
| US7235501B2 | Lanthanum hafnium oxide dielectrics | Electricity | 628 | Expired |
| US7192824B2 | Lanthanide oxide / hafnium oxide dielectric layers | Electricity | 605 | Expired |
| US5751012A | Polysilicon pillar diode for use in a non-volatile memory cell | Electricity | 602 | Expired |
| US7192892B2 | Atomic layer deposited dielectric layers | Electricity | 598 | Expired |
| US7312494B2 | Lanthanide oxide / hafnium oxide dielectric layers | Electricity | 579 | Expired |
| US7041609B2 | Systems and methods for forming metal oxides using alcohols | Electricity | 576 | Expired |
| US7405454B2 | Electronic apparatus with deposited dielectric layers | Electricity | 564 | Expired |
| US7393736B2 | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics | Electricity | 558 | Expired |
| US7732343B2 | Simplified pitch doubling process flow | Electricity | 545 | Active |
| US7910288B2 | Mask material conversion | Electricity | 531 | Active |
| US6784108B1 | Gas pulsing for etch profile control | Electricity | 528 | Expired |
| US5739585A | Single piece package for semiconductor die | Emerging Cross-Sectional Technologies | 523 | Expired |
| US6410459B1 | Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing | Emerging Cross-Sectional Technologies | 522 | Expired |
| US5801104A | Uniform dielectric film deposition on textured surfaces | Emerging Cross-Sectional Technologies | 520 | Expired |
| US7431966B2 | Atomic layer deposition method of depositing an oxide on a substrate | Chemistry; Metallurgy | 517 | Expired |
| US7589029B2 | Atomic layer deposition and conversion | Electricity | 515 | Expired |
| US7838084B2 | Atomic layer deposition method of depositing an oxide on a substrate | Chemistry; Metallurgy | 511 | Active |
| US6218288A | Multiple step methods for forming conformal layers | Electricity | 510 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.