Reverse-conducting semiconductor device

US10109725B2 · kind B2 · utility

Assignee

• ABB Schweiz AG · CH

Inventors

• Liutauras Storasta · Lenzburg, CH
• Chiara Corvasce · Bergdietikon, CH
• Manuel Le Gallo · Zürich, CH
• Munaf Rahimo · Uezwil, CH
• Arnost Kopta · Zürich, CH

Key dates

• Filing date: Jun 22, 2017
• Grant date: Oct 23, 2018
• Expiry date: Jun 22, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

A reverse-conducting MOS device is provided having an active cell region and a termination region. Between a first and second main side. The active cell region comprises a plurality of MOS cells with a base layer of a second conductivity type. On the first main side a bar of the second conductivity type, which has a higher maximum doping concentration than the base layer, is arranged between the active cell region and the termination region, wherein the bar is electrically connected to the first main electrode. On the first main side in the termination region a variable-lateral-doping layer of the second conductivity type is arranged. A protection layer of the second conductivity type is arranged in the variable-lateral-doping layer, which protection layer has a higher maximum doping concentration than the maximum doping concentration of the variable-lateral-doping layer in a region attached to the protection layer.