Chiara Corvasce
20Patents
3h-index
18Co-inventors
60Inventor score
Filing activity: Aug 2, 1999 → Nov 22, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6300654A | Structure of a stacked memory cell, in particular a ferroelectric cell | Electricity | 14 | Expired |
| US6366488B1 | Ferroelectric non-volatile memory cell integrated in a semiconductor substrate | Electricity | 4 | Expired |
| US9105680B2 | Insulated gate bipolar transistor | Electricity | 4 | Active |
| US10109725B2 | Reverse-conducting semiconductor device | Electricity | 3 | Active |
| US6656801B2 | Method of fabricating a ferroelectric stacked memory cell | Electricity | 3 | Expired |
| US9859360B2 | Edge termination for semiconductor devices and corresponding fabrication method | Electricity | 2 | Active |
| US9099520B2 | Insulated gate bipolar transistor | Electricity | 2 | Active |
| US9825158B2 | Insulated gate bipolar transistor | Electricity | 1 | Active |
| US9153676B2 | Insulated gate bipolar transistor | Electricity | 0 | Active |
| US12199144B2 | Power semiconductor device and manufacturiing method | Electricity | 0 | Active |
| US10629714B2 | Insulated gate bipolar transistor | Electricity | 0 | Active |
| US11189688B2 | Insulated gate power semiconductor device and method for manufacturing such device | Electricity | 0 | Active |
| US7052985B2 | Contact structure for an integrated semiconductor device | Electricity | 0 | Expired |
| US12432950B2 | Insulated gate bipolar transistor including trench Schottky electrode | Electricity | 0 | Active |
| US12068312B2 | Reverse conducting insulated gate power semiconductor device having low conduction losses | Electricity | 0 | Active |
| US10128361B2 | Insulated gate power semiconductor device and method for manufacturing such a device | Electricity | 0 | Active |
| US10141196B2 | Power semiconductor device with thick top-metal-design and method for manufacturing such power semiconductor device | Electricity | 0 | Active |
| US11075285B2 | Insulated gate power semiconductor device and method for manufacturing such a device | Electricity | 0 | Active |
| US9553086B2 | Reverse-conducting semiconductor device | Electricity | 0 | Active |
| US6734565B2 | Contact structure for an integrated semiconductor device | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.