Semiconductor device
US10109738B2 · kind B2 · utility
2Cited by
11References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2017 |
| Grant date | Oct 23, 2018 |
| Priority date | — |
| Expiry date | Nov 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device is provided that includes a deep trench defining an active region, and a fin-type pattern protruding within the active region. The fin-type pattern having a lower portion, an upper portion of a narrower width than the lower portion, and a first stepped portion formed at a boundary between the upper portion and the lower portion. The device also includes a first field insulating film surrounding the lower portion and a second field insulating film formed on the first field insulating film and partially surrounding the upper portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.