Koung Min Ryu
18Patents
3h-index
20Co-inventors
56Inventor score
Filing activity: Nov 15, 2013 → Jan 18, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10128240B2 | Semiconductor device and method for fabricating the same | Electricity | 15 | Active |
| US9478551B2 | Semiconductor devices and methods of manufacturing the same | Electricity | 4 | Active |
| US10128241B2 | Integrated circuit devices | Electricity | 4 | Active |
| US10186615B2 | Semiconductor device | Electricity | 3 | Active |
| US9847421B2 | Semiconductor device | Electricity | 2 | Active |
| US10177253B2 | Semiconductor device and method for fabricating the same | Electricity | 2 | Active |
| US10109738B2 | Semiconductor device | Electricity | 2 | Active |
| US10763254B2 | Semiconductor device | Electricity | 1 | Active |
| US11004732B2 | Method of manufacturing semiconductor device | Electricity | 0 | Active |
| US10347763B2 | Semiconductor device | Electricity | 0 | Active |
| US9793399B2 | Semiconductor device having insulating pattern and method of forming the same | Electricity | 0 | Active |
| US10580891B2 | Semiconductor device and method for fabricating the same | Electricity | 0 | Active |
| US10727349B2 | Semiconductor device | Electricity | 0 | Active |
| US10381265B2 | Method of manufacturing semiconductor device with interlayer insulating layers | Electricity | 0 | Active |
| US12211846B2 | Semiconductor device | Electricity | 0 | Active |
| US10854754B2 | Semiconductor device | Electricity | 0 | Active |
| US10818657B2 | Semiconductor device and method for controlling gate profile using thin film stress in gate last process | Electricity | 0 | Active |
| US11908858B2 | Semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.