Method for manufacturing mixed-dimension and void-free MRAM structure

US10109790B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Harry-Hak-Lay Chuang · Austin, US
• Jiunyu Tsai · Hsinchu, TW
• Hung Cho Wang · Taipei, TW
• Tsun Chung Tu · Tainan, TW

Key dates

• Filing date: Aug 22, 2017
• Grant date: Oct 23, 2018
• Expiry date: Aug 22, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/22

Abstract

A method for manufacturing a semiconductor structure is disclosed. The method includes: providing a substrate; forming an MRAM structure over the substrate; forming a first dielectric layer over the MRAM structure; forming a stop layer over the first dielectric layer; forming a second dielectric layer over the stop layer; and removing the second dielectric layer, the stop layer and at least a portion of the first dielectric layer through a planarization operation without exposing a top electrode of the MRAM structure. Associated methods are also disclosed.