Resist material and pattern forming method using same
US10113030B2 · kind B2 · utility
2Cited by
1References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 4, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Apr 4, 2037 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB29K2101/10
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
In one embodiment, a resist material to be used in an imprint process includes a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group. The material further includes a dendrimer having at least two reactive groups for photo-cationic polymerization. The material further includes a photo-acid generator as a polymerization initiator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.