Magnetic memory device that is protected against reading using an external magnetic field and method for operating such magnetic memory device
US10115445B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 27, 2016 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Jun 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device including a plurality of magnetic units, each unit including a first and second magnetic tunnel junctions—electrically connected in series by a current line and a strap. Each junction includes a first and second storage layer having a first and second storage magnetization and a first sense magnetic layer having a first and second senses magnetization. A field line is configured to provide an input signal generating a first and second magnetic field for varying the first and second sense magnetization. Each magnetic unit is provided with a data state such that the first and second storage magnetizations are aligned in opposed directions. The first and second magnetic field are adapted for varying respectively the first and second sense magnetization in a first and second direction opposed to the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.