CROCUS TECHNOLOGY SA
84Patents
84Active
84Granted
55Portfolio score
Filing activity: Oct 9, 2007 → Jun 26, 2020 · 16 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8411500B2 | Magnetic device with optimized heat confinement | Electricity | 998 | Active |
| US8385107B2 | Magnetic memory with a thermally assisted spin transfer torque writing procedure using a low writing current | Electricity | 52 | Active |
| US8441844B2 | Method for writing in a MRAM-based memory device with reduced power consumption | Physics | 47 | Active |
| US8102701B2 | Magnetic memory with a thermally assisted writing procedure | Physics | 46 | Active |
| US8609439B2 | Magnetic tunnel junction comprising a polarizing layer | Electricity | 42 | Active |
| US7518897B2 | System and method for providing content-addressable magnetoresistive random access memory cells | Physics | 21 | Active |
| US8064245B2 | Magnetic random access memory with an elliptical magnetic tunnel junction | Physics | 13 | Active |
| US8031519B2 | Shared line magnetic random access memory cells | Physics | 12 | Active |
| US8228703B2 | Ternary Content Addressable Magnetoresistive random access memory cell | Physics | 10 | Active |
| US8830733B2 | Circuit for generating adjustable timing signals for sensing a self-referenced MRAM cell | Physics | 8 | Active |
| US8630112B2 | Multilevel magnetic element | Emerging Cross-Sectional Technologies | 8 | Active |
| US8228716B2 | Magnetic element with thermally assisted writing | Physics | 7 | Active |
| US8169815B2 | System and method for writing data to magnetoresistive random access memory cells | Physics | 7 | Active |
| US8659938B2 | Multibit magnetic random access memory cell with improved read margin | Physics | 6 | Active |
| US7894228B2 | System and method for providing content-addressable magnetoresistive random access memory cells | Physics | 5 | Active |
| US8228702B2 | Ultimate magnetic random access memory-based ternary cam | Physics | 4 | Active |
| US8542525B2 | MRAM-based memory device with rotated gate | Physics | 4 | Active |
| US8514618B2 | Magnetic random access memory cell with improved dispersion of the switching field | Physics | 4 | Active |
| US8289765B2 | Active strap magnetic random access memory cells configured to perform thermally-assisted writing | Physics | 4 | Active |
| US8218349B2 | Non-volatile logic devices using magnetic tunnel junctions | Physics | 4 | Active |
| US7791917B2 | System and method for providing content-addressable magnetoresistive random access memory cells | Physics | 4 | Active |
| US8717812B2 | Thermally assisted magnetic random access memory element with improved endurance | Electricity | 4 | Active |
| US8971526B2 | Method of counter-measuring against side-channel attacks | Electricity | 4 | Active |
| US9342294B2 | Information processing device comprising a read-only memory and a method for patching the read-only memory | Physics | 3 | Active |
| US8391053B2 | Magnetic memory with a thermally assisted writing procedure and reduced writing field | Physics | 3 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.