Patent · US Active

Reducing read disturb effect on partially programmed blocks of non-volatile memory

US10115472B1 · kind B1 · utility

5Cited by
0References
19Claims
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Key dates

Filing dateAug 2, 2017
Grant dateOct 30, 2018
Priority date
Expiry dateAug 2, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/344
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A data storage system includes a non-volatile memory array controlled by a controller. In response to receipt of write data to be written to the non-volatile memory array, the controller determines whether a read count of an unfinalized candidate block of storage within the non-volatile memory array satisfies a read count threshold applicable to the block. In response to determining that the read count of the unfinalized candidate block satisfies the read count threshold, the controller finalizing programming of the candidate block and programming an alternative block with the write data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.