Patent · US Active

Manufacturing of silicon strained in tension on insulator by amorphisation then recrystallisation

US10115590B2 · kind B2 · utility

2Cited by

2References

19Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Shay Reboh · Grenoble, FR
Aurore Bonneviaille · Fort-de-France, FR

Key dates

Filing date	Apr 18, 2017
Grant date	Oct 30, 2018
Priority date	—
Expiry date	Apr 23, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/796
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Method for making a strained silicon structure, wherein a silicon germanium layer is formed on the silicon layer, followed by another layer with a lower concentration of germanium before selective amorphisation of the silicon and silicon germanium layer relative to this other layer before the assembly is recrystallised so as to strain the silicon semiconducting layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.