Chemical modification of hardmask films for enhanced etching and selective removal
US10115593B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2017 |
| Grant date | Oct 30, 2018 |
| Priority date | — |
| Expiry date | Dec 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.