Method for in-die overlay control using FEOL dummy fill layer

US10115621B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Peter Moll · Dresden, DE
• Martin Schmidt · Mannheim, DE
• Carsten Hartig · Meerane, DE
• Matthias Ruhm · Dresden, DE
• Stefan Thierbach · Dresden, DE
• Stefan Rongen · Dresden, DE
• Daniel Fischer · Furth, DE
• Andreas Schuring · Dresden, DE
• Guido Überreiter · Dresden, DE

Key dates

• Filing date: May 13, 2016
• Grant date: Oct 30, 2018
• Expiry date: Sep 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2223/54426
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for in-die overlay reticle measurement and the resulting devices are disclosed. Embodiments include providing parallel structures in a first layer on a substrate; determining measurement sites, in a second layer above the first layer, void of active integrated circuit elements; forming overlay trenches, in the measurement sites and parallel to the structures, exposing sections of the structures, wherein each overlay trench is aligned over a structure and over spaces between the structure and adjacent structures; determining a trench center-of-gravity of an overlay trench; determining a structure center-of-gravity of a structure exposed in the overlay trench; and determining an overlay parameter based on a difference between the trench center-of-gravity and the structure center-of-gravity.