GlobalFoundries Inc.
5,702Patents
5,682Active
5,702Granted
66Portfolio score
Filing activity: Jan 5, 1999 → May 26, 2023 · 561 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9324846B1 | Field plate in heterojunction bipolar transistor with improved break-down voltage | Electricity | 490 | Active |
| US9748145B1 | Semiconductor devices with varying threshold voltage and fabrication methods thereof | Electricity | 464 | Active |
| US7829460B2 | Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride | Electricity | 449 | Active |
| US9142437B2 | System for separately handling different size FOUPs | Electricity | 448 | Active |
| US9362180B2 | Integrated circuit having multiple threshold voltages | Electricity | 405 | Active |
| US9252238B1 | Semiconductor structures with coplanar recessed gate layers and fabrication methods | Electricity | 405 | Active |
| US9576952B2 | Integrated circuits with varying gate structures and fabrication methods | Electricity | 403 | Active |
| US10106892B1 | Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same | Electricity | 402 | Active |
| US8859368B2 | Semiconductor device incorporating a multi-function layer into gate stacks | Electricity | 396 | Active |
| US10483154B1 | Front-end-of-line device structure and method of forming such a front-end-of-line device structure | Electricity | 375 | Active |
| US10332963B1 | Uniformity tuning of variable-height features formed in trenches | Electricity | 326 | Active |
| US9369488B2 | Policy enforcement using natural language processing | Electricity | 300 | Active |
| US10332747B1 | Selective titanium nitride deposition using oxides of lanthanum masks | Electricity | 267 | Active |
| US8059530B1 | System and method for controlling network access | Electricity | 233 | Active |
| US8441131B2 | Strain-compensating fill patterns for controlling semiconductor chip package interactions | Electricity | 201 | Active |
| US9536848B2 | Bond pad structure for low temperature flip chip bonding | Electricity | 197 | Active |
| US9620481B2 | Substrate bonding with diffusion barrier structures | Electricity | 197 | Active |
| US9111907B2 | Silicide protection during contact metallization and resulting semiconductor structures | Electricity | 172 | Active |
| US9535631B2 | Multi-path management | Physics | 163 | Active |
| US8871651B1 | Mask formation processing | Electricity | 147 | Active |
| US8048791B2 | Method of forming a semiconductor device | Electricity | 122 | Active |
| US8183107B2 | Semiconductor devices with improved local matching and end resistance of RX based resistors | Electricity | 119 | Active |
| US8617996B1 | Fin removal method | Electricity | 109 | Active |
| US9412616B1 | Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting products | Electricity | 109 | Active |
| US7749662B2 | Process margin using discrete assist features | Physics | 107 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.